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March 5, 2026Nanoscale Advances2 citationsOpen Access

Recent Progress in HfO₂-Based Ferroelectric Devices with Oxide Semiconductor Channels: A Comprehensive Review

HKHe Young KangYSYun Ho ShinDKDa Eun Kim

Key Points

  • The aim is to review advances in HfO₂-based ferroelectric devices and their integration with oxide semiconductor channels.
  • Comprehensive literature analysis on HfO₂ ferroelectric properties
  • Assessment of materials compatibility with CMOS technology
  • Examination of recent technological advancements in device fabrication
  • Identified key challenges in traditional perovskite integration with CMOS
  • Highlighted benefits of HfO₂ as a promising alternative material
  • Showed potential for improved device scalability and performance

Abstract

With conventional silicon-based devices approaching their physical scaling limits and traditional perovskite ferroelectrics facing complementary metal oxide semiconductor (CMOS) compatibility challenges, the development of alternative material integrations is essential for...

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Cite This Study

Kang et al. (2026) studied this question.

synapsesocial.com/papers/69a91da8d6127c7a504c0a14https://doi.org/10.1039/d5na00980d
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