Multiscale modeling of gallium nitride atomic layer etching in chlorinated plasmas: A combined dynamic global model, ab initio , and kinetic Monte Carlo approach
This work presents a multiscale model to optimize etching in gallium nitride using chlorinated plasmas, suggesting new insights into surface interactions.
Key Points
The study aims to develop a comprehensive model for gallium nitride (GaN) etching in chlorinated plasmas, focusing on surface interactions.
Develop a dynamic global model for Cl2/Ar plasmas.
Apply a Monte Carlo model for plasma sheath dynamics.
Utilize kinetic Monte Carlo methods for surface etching simulations.
Employ density functional theory for Cl adsorption analysis.
Demonstrated a self-limited etching behavior consistent with atomic layer etching principles.
Identified significant impacts of residual chlorine in shallow layers on etch rates.
Provided a predictive framework for optimizing GaN ALE processes.