The rapid progress in information technologies has driven a strong demand for memory devices that combine large storage capacity, high-speed operation, and reduced energy consumption. Magnetic tunnel junctions (MTJs) possessing significant tunnel magnetoresistance effects have considerable applications in magnetic random-access memory (MRAM), read heads, and magnetic sensors. In current MTJ technologies, data writing is predominantly achieved via electric currents, a method that consumes substantial energy. Replacing it with electric-field-driven switching could greatly improve energy efficiency. Considerable attention has been directed toward integrating ferroelectric materials into the MTJ barriers and utilizing voltage-controlled magnetic anisotropy. However, these approaches often face challenges such as low operating temperatures, assistance of external magnetic fields, or volatile control of resistance states. Recent advancements in strain-mediated manipulation of magnetism via electric field in ferroelectric/ferromagnetic multiferroic heterostructures provide practical strategies for implementing manipulation of MTJs via electric field. In this perspective, we present a concise summary of the latest developments concerning the modulation of MTJ resistance states via electric fields composed of multiferroic heterostructures and ferroelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3. Progress on both in-plane and perpendicular magnetic anisotropic MTJs is summarized, and the discussion concludes with an outlook on potential developments. Furthermore, this work concludes by outlining prospective research avenues for the manipulation of MTJs in multiferroic heterostructures via electric field based on strain-mediated magnetoelectric coupling, a mechanism that is expected to remain pivotal for advancing fundamental understanding and realizing next-generation MRAM technologies.
Sun et al. (2026) studied this question.