We report the experimental observation of Hall resistance in antiferromagnetic semiconductor CrSb2 thin films at different temperatures. By preparing the antiferromagnetic semiconductor CrSb2 via magnetron sputtering and establishing the correlation between temperature, magnetic field, and Hall resistance, this work reveals the modulation of transport properties and the regulation mechanism in the antiferromagnetic semiconductor CrSb2, providing experimental basis for the design of temperature-sensitive spintronic devices based on CrSb2.
Gao et al. (Sun,) studied this question.