Outside Back Cover: Atomically Precise Interfacial Engineering on Tin‐Silicon Oxo Clusters for Sub‐8 nm Lithography

In the Research Article (e24320), Ni Zhen, Lei Zhang, and co-workers report the atomic-level interfacial engineering of tin oxo cluster photoresists by decorating silane moieties. The exposed Sn-O-Si and Si-O-Si networks have significantly enhanced both multiple crosslinking and substrate adhesion, giving rise to high-fidelity patterning at the sub-8 nm scale. This work provides a potential material design strategy for next-generation ultrahigh resolution lithography in advanced chip technology nodes.