Crystal Growth, New Phenomena, and New Functions in the Gap Between Two and Three Dimensions

Surface and interface of the graphene/SiC system, as a gap between two and three dimensions, can provide the novel field for crystal growth. In general, numerous reports on van der Waals epitaxy and remote epitaxy on its surface and the intercalation in the interface have been widely reported. They utilize the various effects and interactions of the surface and the substrate, and the two-dimensional field in the interface. Here, recent studies on the novel crystallographic, electronic, magnetic, and optical phenomena and functions found on the graphene/SiC surface and their interface are reviewed.