Revealing and engineering contact-origin noise in ultrathin tellurium transistors

Key Points

• To identify and suppress excess low-current noise in ultrathin tellurium transistors.
• Identified the origin of noise in ultrathin tellurium field-effect transistors (FETs).
• Modulated the tellurium thickness near the contacts to suppress noise.
• Successfully suppressed excess low-current noise in tellurium transistors.
• Improved transistor performance by engineering the contact region.

Abstract