Neutron Reflectometry for In-Depth Porosity and Figure-of-Merits Correction of Organic Electrochemical Transistors

Key Points

• The aim is to analyze the porosity within organic electrochemical transistors to enhance their performance.
• Utilized neutron reflectometry to assess the structure of porous channels
• Investigated the spatial arrangement of the active material in thin films
• Conducted a figure-of-merits correction to evaluate performance
• Improved understanding of how porosity affects OECT performance
• Significant correlations between channel structure and electrochemical activity observed

Abstract