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March 21, 2026Journal of Applied PhysicsOpen Access

Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control

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Authors

MIMasataka ImuraTHTakanobu HirotoTMTakaaki Mano

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Overview

This analysis demonstrates reliable growth rate calculations in InxGa1-xN superlattices, indicating effective MOVPE optimization strategies.

Key Points

  • The research aims to determine the growth rates of GaN and InN in InxGa1−xN superlattices during MOVPE.
  • Grew GaN/InxGa1−xN superlattices on GaN/sapphire substrates using MOVPE.
  • Used high-resolution X-ray diffraction analysis to determine growth rates.
  • Maintained constant temperature, pressure, and gas-flow balance to measure individual growth rates.
  • Developed a model distinguishing between incorporation and desorption processes.
  • Identified negligible interaction between GaN and InN growth rates for low-In compositions.
  • Confirmed model predictions for InxGa1−xN growth rates at given vapor-phase ratios and V/III ratios.
  • Established practical guidelines for optimizing MOVPE growth for light-emitting diodes.

Cite This Study

Imura et al. (2026) studied this question.

synapsesocial.com/papers/69be38906e48c4981c679114https://doi.org/10.1063/5.0307826
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