What question did this study set out to answer?

This research aims to analyze the charge transport characteristics and trap parameters in MIS structures involving germanosilicate films.

March 26, 2026

Charge Transport in MIS Structures ITO/GeOx(z)SiO2(1–z)/Si

Puntos clave

This research aims to analyze the charge transport characteristics and trap parameters in MIS structures involving germanosilicate films.
Used the voltage-ampere characteristics and trap parameters for analysis.
Applied the spatial charge-limited current model.
Fabricated films from germanium oxide and silicon oxide powders by electron beam evaporation.
Deposited films on n+-Si and p+-Si substrates.
Determined that the MIS structures exhibit bipolar conductivity.
Found that hole-type conductivity dominates when z > 0.5.
Identified electronic-type conductivity dominating when z ≤ 0.5.
Established the presence of at least two types of traps with localized energy levels.

Resumen

The comparative analysis of the voltage-ampere characteristics and trap parameters is carried out within the framework of the spatial charge-limited current model in metal-insulator-semiconductor structures ITO/GeOx(z)SiO2(1–z) (0.25 ≤ z ≤ 1)/Si with germanosilicate films obtained by electron beam evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on n+-Si and p+-Si substrates. It has determined that the MIS structures of ITO/GeOx(z)SiO2(1–z)/Si have a bipolar type of conductivity. The hole type of conductivity dominates in MIS structures with a parameter z > 0.5, and the electronic type of conductivity dominate in structures z ≤ 0.5. It is also determined that the films have at least two types of traps with localized levels energy.

Me gusta

Guardar

Cite This Study

Yushkov et al. (Mon,) studied this question.

synapsesocial.com/papers/69c4cc69fdc3bde448917938 https://doi.org/https://doi.org/10.1134/s1063739725601699

Me gusta

Guardar