The aim is to deposit polycrystalline κ-Ga2O3 on Si substrates utilizing a GZO buffer layer.
Deposited polycrystalline κ-Ga2O3 on Si(100) substrates.
Used a GZO buffer layer during the deposition process.
Monitored the growth process for layer formation.
Successfully deposited κ-Ga2O3 on Si substrates.
Identified the formation of a ZnGa2O4 transition layer during the growth process.
Resumen
Polycrystalline κ-Ga 2 O 3 was successfully deposited on a Si substrate using a GZO buffer layer. Furthermore, it was revealed that a ZnGa 2 O 4 transition layer forms during the growth process.