h‐BN/HfO 2 Interface‐Enabled Optoelectronic Doping for Low‐Voltage, Reconfigurable MoTe 2 Nanoelectronics

ABSTRACT Engineering the semiconductor/dielectric interface is crucial for advancing two‐dimensional (2D) nanoelectronics, where device performance is predominantly governed by interfacial defects and dielectric coupling. Optoelectronic doping based on carrier trapping at the h‐BN/SiO 2 interface has enabled non‐volatile and reversible carrier modulation in several 2D semiconductors, yet its practical application remains limited by the low dielectric constant of SiO 2 , which necessitates thick oxides, large gate voltages, and voltage‐asymmetric logic circuit operation. In this work, we develop a MoTe 2 /h‐BN field‐effect transistor integrated with a high‐k HfO 2 dielectric, enabling reversible, spatially selective, and polarity‐programmable optoelectronic doping. The h‐BN/HfO 2 interface‐enabled photoinduced charge trapping increases the carrier density by an order of magnitude (∼4.16 × 10 13 cm −2 ) and improves the subthreshold swing to ∼580 mV dec −1 , significantly outperforming h‐BN/SiO 2 counterparts. The programmed states exhibit nonvolatile retention exceeding 30 days. Through local polarity control, a resist‐free p‐n junction is realized, exhibiting near‐ideal diode behavior ( η = 1.26), together with an on/off ratio exceeding 10 3 . By integrating well‐matched p‐ and n‐channel MoTe 2 transistors, a CMOS inverter is achieved with ∼6.5 voltage gain and a near‐zero switching threshold voltage. These findings establish h‐BN/high‐k interfaces as a robust platform for low‐voltage, non‐volatile, and reconfigurable 2D electronics.