ABSTRACT A compact DC‐to‐24 GHz single‐pole, double‐throw switch with enhanced isolation, low insertion loss and high‐speed performance, by adopting a multiple series‐shunt structure, has been presented in this letter. The mechanism of multiple series‐shunt structures of the switch on isolation and insertion loss are analysed. To verify the feasibility, it has been fabricated in a 0.5‐µm GaAs p‐HEMT process. The measured results indicated that the chip exhibits a maximum insertion loss of 2.2 dB at 24 GHz, an average isolation exceeding 40 dB, and a speed less than 5 ns. Compared with the traditional scheme, the fabricated chip can realise voltage control from ±5 V to ±10 V to meet the requirements of both digital control and high‐power applications.
Guo et al. (Thu,) studied this question.