Nonvolatile Reconfigurable Synthetic Antiferromagnetic Devices Induced by Spin-Orbit Torque for Multifunctional In-Memory Computing

The proliferation of intelligent edge devices demands compact, low-power hardware capable of dynamically switching between sensing, logic, and learning tasks—a versatility that traditional multi-chip solutions fundamentally lack. Here, we demonstrate a reconfigurable spin–orbit torque (SOT) device based on an FeTb/Ru/Co synthetic antiferromagnetic (SAF) heterostructure. By modulating the input current amplitude, the device dynamically switches between two distinct operating modes: saturation and activation. In the saturation regime (>80 mA), deterministic magnetization reversal enables Boolean logic operations (AND, NOR). In the activation regime (<80 mA), gradual, non-volatile conductance modulation emulates synaptic plasticity. Benefiting from the strong antiferromagnetic coupling and near-zero net magnetization of the SAF structure, all operations are achieved without external magnetic fields. This single-device, dual-mode reconfigurable architecture establishes a new paradigm for high-density, low-power, multifunctional in-memory computing units, with promise for advancing adaptive edge computing chips.