Sub-15 nm Line Patterning at 30 kV: Process Window Extraction and Lift-Off Validation

Sub-15 nm line structures are key building blocks for advanced device prototyping, nanoscale electrodes, and lithography templates such as etch/deposition masks. Although ultrahigh-voltage (≥100 kV) electron-beam lithography (EBL) can more readily achieve extremely small critical dimensions, its tool and infrastructure requirements limit widespread adoption in many laboratories. In contrast, 30 kV field-emission SEM platforms are far more accessible; however, resolution-limit patterning at 30 kV is more sensitive to beam current, exposure dose, and development conditions, motivating the establishment of a reproducible process flow and a well-defined process window. Here, we investigate the resolution limit of isolated lines using a Zeiss Gemini 460 system operated at 30 kV and an in-house pattern generator with 950 k PMMA C2 resist. To demonstrate device-level applicability, we develop a stable lift-off process, and all critical dimensions are evaluated on metal lines after e-beam evaporation and lift-off. By screening beam current and scanning dose to build the dose-to-size relationship, we show that reducing beam current significantly improves the achievable minimum line width. Under 35 pA, using CD ≤ 15 nm as the criterion for sub-15 nm window extraction, the usable dose range is 700, 804.3 µC/cm2, corresponding to a dose latitude of ~14.9%. The best performance is obtained at 700 µC/cm2, yielding a transferred metal line width of 13.85 nm after lift-off. This work provides a practical resolution-limit process flow and a quantitative process window for performing sub-15 nm patterning on accessible 30 kV platforms, supported by product-level lift-off validation.