Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application (Adv. Funct. Mater. 28/2026)

Key Points

• This research aims to explore the properties of a new altermagnetic material and its potential applications in electronic devices.
• Identification of Penta-MnS2 as a second-order topological insulator.
• Designing a high-performance altermagnetic tunneling junction using MnS2.
• Characterization of spin-polarized corner states and altermagnetic Bloch states.
• Penta-MnS2 is confirmed as the first altermagnetic second-order topological insulator.
• The tunneling junction exhibits enhanced performance due to the unique properties of altermagnetic states.
• The findings suggest a promising direction for low-power, high-speed memory devices.

Abstract