Spectroscopic Investigation of Bandwidth Control Effects on the Mott-Hubbard State in Epitaxial RVO3 (R = La, Pr, Y) Thin Films

Key Points

• This research aims to understand how bandwidth control affects the Mott-Hubbard state in epitaxial RVO3 thin films.
• Performed spectroscopic investigation of RVO3 (R = La, Pr, Y) thin films.
• Studied films grown on LaAlO3 substrates.
• Analyzed electronic structure under various strain conditions.
• Identified systematic changes in electronic structure according to R-site modifications.
• Demonstrated influence of epitaxial strain on Mott-Hubbard characteristics.

Abstract