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The matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured. Improvements to the existing theory are given, as well as extensions for long-distance matching and rotation of devices. Matching parameters of several processes are compared. The matching results have been verified by measurements and calculations on several basic circuits.>
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Pelgrom et al. (Sun,) studied this question.
www.synapsesocial.com/papers/69d9c56b3e67f8d1386842e4 — DOI: https://doi.org/10.1109/jssc.1989.572629
Marcel Pelgrom
Aad C.J. Duinmaijer
A.P.G. Welbers
IEEE Journal of Solid-State Circuits
Philips (Netherlands)
Philips (Finland)
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