High Al-content AlxGa1-xN (0.7 < x < 1) quasi-vertical Schottky barrier diodes (SBDs) with distributed polarization doping were grown on the bulk AlN substrate. They exhibit excellent rectification behavior with a large forward current density (~14 kA/cm2 ) and a high breakdown field of ~8.3 MV/cm. The SBDs also exhibited low ideality factors of (n~1.2) with a high Schottky barrier height (Φ b~ 1.7 eV). Thus, this study demonstrates the feasibility of the distributed polarization doping approach for high current–high voltage devices.
Building similarity graph...
Analyzing shared references across papers
Loading...
Tariq Jamil
Abdullah Al Mamun Mazumder
Mafruda Rahman
University of South Carolina
Building similarity graph...
Analyzing shared references across papers
Loading...
Jamil et al. (Mon,) studied this question.
www.synapsesocial.com/papers/69dc89183afacbeac03ead8f — DOI: https://doi.org/10.1063/5.0325830">https://doi.org/10.1063/5.0325830</a></p