Indirect-to direct bandgap transition in CsRESiS 4 (RE = Sc, Y, Lanthanides) through intrinsic charge-transfer-transitions (CTT) behaviour

Key Points

• The research aims to investigate the transition from an indirect to a direct bandgap in specific p-type semiconductors.
• Characterization of CsRESiS4 materials with varying RE elements.
• Analysis of charge-transfer transitions in relation to bandgap properties.
• Assessment of semiconductor performance in electronic applications.
• Successful demonstration of an indirect-to-direct bandgap transition.
• Enhanced performance metrics suggesting improved applications in electronics.
• Identification of intrinsic charge-transfer transitions as a critical factor.

Abstract