Research demonstrates enhanced photodetection performance in g-C3N4 devices through optimized annealing procedures, indicating potential for advanced optical applications.
Key Points
The aim is to improve the performance of photodetectors based on g-C3N4 by enhancing film morphology through controlled annealing.
Controlled annealing at a rate of 1 °C per minute during thermal deposition.
Fabrication of g-C3N4 thin films on patterned FTO electrodes.
Characterization of photodetector response across the UV-visible spectrum.
Achieved a uniform, dense g-C3N4 thin film.
Demonstrated a responsivity of 2.5 mA/W at 410 nm.
Obtained a photo-to-dark current ratio of approximately 40 at 1 volt bias.