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April 30, 2026ACS Applied Electronic Materials0 citations

Memristive and Threshold Switching in Epitaxial Cu 2– x Se Thin Films for Neuromorphic Computing

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BSBecker SharifTJToyanath JoshiRHRyan Van Haren

Key Points

  • The study aims to explore the switching behavior of Cu2–xSe thin films for neuromorphic computing applications.
  • Investigated epitaxial Cu2–xSe thin films with varying copper concentrations.
  • Analyzed the switching behavior including both threshold and memristive types.
  • Compared film characteristics with respect to Cu deficiency.
  • Low-Cu deficiency films exhibited volatile threshold switching with sharp turn-on behavior.
  • Higher-Cu deficiency films displayed nonvolatile memristive switching with stable conductance modulation.
  • The findings support distinct synaptic and neuronal-like functionalities based on material stoichiometry.

Abstract

Neuromorphic computing is based on electronic devices that emulate both synaptic memory and neuronal activation within compact, energy-efficient architectures. Materials capable of supporting these distinct neuromorphic functions within a single chemical system are therefore highly desirable. Here we report on the switching behavior of epitaxial Cu2–xSe cubic thin films as a function of the copper concentration. Films with low Cu deficiency display volatile threshold switching with sharp turn-on, analogous to artificial neuron activation. In contrast, films with higher Cu deficiency exhibit nonvolatile memristive switching with analog conductance modulation and stable potentiation and depression, consistent with synaptic operation. Our results demonstrate that synaptic and neuron-like behaviors can be obtained by adjusting the stoichiometry within the Cu2–xSe material system.

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Cite This Study

Sharif et al. (2026) studied this question.

synapsesocial.com/papers/69f2f1471e5f7920c638705fhttps://doi.org/10.1021/acsaelm.6c00301
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