Enhanced Passivation of Boron-Doped Polysilicon Passivated Contacts With a Single-Sided J0 of 2.8 fA/cm2 by Dual-Layer Silicon Oxide Structure. | Synapse
To investigate how a dual-layer silicon oxide structure can enhance the passivation of boron-doped polysilicon contacts.
Utilized a dual-layer silicon oxide structure
Reduced interface defect density
Evaluated performance in high-efficiency TBC cells
Achieved a single-sided J0 of 2.8 fA/cm²
Significant reduction in interface defects
Enhanced overall passivation effectiveness
Abstract
architecture effectively lowers interface defect density and enhances p-type TOPCon passivation, underscoring its significant potential for industrial application in high-efficiency TBC cells.