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May 9, 2026Journal of the Korean Society for Precision EngineeringOpen Access

Multi-zone Pressure Control for Improvement of Within Wafer Non-uniformity in CMP

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Authors

TLTae San LeeELE S LeeHJHae Do Jeong

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Overview

Randomized trial demonstrates improved polishing uniformity using multi-zone pressure control in semiconductor fabrication, implying enhanced productivity.

Key Points

  • This study aims to explore how multi-zone pressure control can improve non-uniformity in Chemical Mechanical Polishing (CMP) for semiconductor wafers.
  • Investigated the effectiveness of a multi-zone pressure-controlled carrier in CMP.
  • Compared non-uniformity reduction between single-zone and multi-zone carriers.
  • Evaluated polishing uniformity over a range of 3 mm to 20 mm from the wafer edge.
  • Multi-zone carrier reduced non-uniformity to below 3%.
  • Single-zone carriers resulted in limited improvements of about 3%.
  • Edge removal deficiencies were effectively addressed through precise pressure control.

Cite This Study

Lee et al. (2026) studied this question.

synapsesocial.com/papers/69fed0e2b9154b0b8287807fhttps://doi.org/10.7736/jkspe.025.132
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