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May 10, 2026Journal of Applied Physics0 citationsOpen Access

Strain-Driven Amorphization and Lattice Engineering in Aluminum Yttrium Nitride Thin Films

Strain-driven amorphization in Al1− x Y x N thin films and lattice-engineering stabilization illustrated by In1− x Y x N

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Authors

NAN. AfsharNWN. WolffFHF. Hörich

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Overview

Randomized trial examines strain effects on structural stability in thin films, highlighting potential for engineering solutions.

Key Points

  • This work investigates the nanoscale structural origin of the amorphization transition in aluminum yttrium nitride (Al1−xYxN) thin films.
  • Deposited Al1−xYxN thin films on an AlN buffer layer using ultra-high-vacuum sputtering.
  • Conducted transmission electron microscopy, x-ray diffraction, and ToF-SIMS analyses.
  • Compared results with an analogous series of In1−xYxN films.
  • Partial amorphization occurs in Al1−xYxN films at Y concentrations (x) as low as 0.21.
  • Al1−xYxN films become fully amorphous at x = 0.5.
  • In1−xYxN films maintain wurtzite structure up to x = 0.5, confirming strain suppression in larger host lattices.

Cite This Study

Afshar et al. (2026) studied this question.

synapsesocial.com/papers/6a002087c8f74e3340f9b58chttps://doi.org/10.1063/5.0331741
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