Device simulation of layer dependence on 10-nm-gate MoS2 transistors

Key Points

• The central aim is to investigate how the performance of 10-nm-gate MoS2 transistors varies with the number of layers.
• Systematic examination of device performance across different layers of MoS2.
• Characterization of performance metrics including on/off ratios and mobility.
• Performance metrics demonstrate significant variation with layer number, indicating optimized performance at specific layers.
• On/off ratios improve as layer counts increase up to a certain threshold.