Point Defect-Driven Switching of Conductivity Type in Bi2Te3 Films prepared by Atomic Layer Deposition

Key Points

• This research aims to explore how point defects influence the conductivity type in bismuth telluride films.
• Films prepared using atomic layer deposition (ALD)
• Investigation of point defect influence on conductivity
• Application of the findings in thermoelectric devices
• Altering point defects in bismuth telluride films switched conductivity from n-type to p-type.
• Demonstrated significant improvement in the thermoelectric properties depending on defect concentration.