This research investigates how surface treatment affects noise levels in photoluminescence (PL) measurements of silicon vacancies in diodes.
Analyzed signal-to-noise ratio in PIN-diodes with different surface treatments
Tested emitters located at varying depths on c-plane and a-plane wafers
Near-surface emitters achieved a signal-to-noise ratio of 15
Deeper emitters recorded a signal-to-noise ratio of 50
Abstract
environment. Single emitters in these PIN-diodes show an increased signal-to-noise ratio of 15 for near-surface and 50 for deeper emitters on both c-plane and a-plane wafers.