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May 15, 2026Materials Advances0 citationsOpen Access

Extra-low resistivity in N and H doped Cu 2 O thin films grown by room temperature RF sputtering.

ATA. Di TrolioPLPaolo Massimiliano LatinoBPBarbara Paci

Key Points

  • The aim is to investigate the electrical properties of N and H doped Cu2O thin films grown by RF sputtering.
  • Cu2O thin films were synthesized using room temperature RF sputtering.
  • N and H doping techniques were applied to modify the electrical properties of the films.
  • Conductivity measurements were conducted to assess the impact of doping.
  • Doped Cu2O thin films exhibited significantly lower resistivity compared to undoped versions.
  • The best-performing films showed enhanced conductivity, facilitating potential use in solar cells.

Abstract

Cuprous oxide (Cu 2 O) is an intrinsic p-type semiconductor representing an interesting, potential hole trans-porting material in 3rd generation solar cells. However, its practical applications are significantly limited by its intrinsically...

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Cite This Study

Trolio et al. (2026) studied this question.

synapsesocial.com/papers/6a06b914e7dec685947aba0fhttps://doi.org/10.1039/d6ma00335d
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