Randomized trial demonstrates exciton control through bubble-induced strain in few-layer WS2, suggesting a new direction for semiconductor engineering.
Key Points
The aim is to develop bubble platforms for systematic engineering of the band structure and exciton pathways in few-layer WS2.
Controlled exfoliation onto Au films and PDMS spherical caps to create interfacial bubbles.
Application of tensile strain to manipulate band structure and exciton pathways.
Investigation of layer-dependent effects in monolayers, bilayers, and trilayers.
Monolayer WS2 shows up to ∼150 meV direct band gap tunability and enhanced trion emission.
In bilayers, strain enhances and redshifts indirect exciton emission.
Trilayers activate dark-exciton-related states and modify indirect recombination pathways.