Chalcopyrite-based thin-film solar cells have great potential for various applications, such as top or bottom cells in tandem devices, in addition to their use as standard single-junction modules due to their tuneable bandgap energy. A bandgap energy Eg > 1.5 eV should be targeted to realize a wide-bandgap top cell, e.g., by increasing the Ga/(Ga + In) (GGI) ratio in Cu(In,Ga)Se2 (CIGS) cells to the range of 0.7–1. A second approach is targeting the second theoretical efficiency maximum at a little lower Eg = 1.34 eV with a GGI around 0.6 for high-efficiency single-junction applications with reduced electrical losses. An industry-relevant (Ag,Cu)(In,Ga)Se2 (ACIGS) co-evaporation process for wide-bandgap cells fabricated with GGI ratios above 0.6, with moderate Ag/(Ag + Cu) (AAC) ratios 0.6 compared to Ag-free reference cells. (Zn,Mg)O, either with a Mg/(Mg + Zn) ratio of 0.15 or 0.25, is a good option as high-resistive layer replacing the commonly used i-ZnO in combination with a CdS buffer. Our best ACIGS wide-bandgap solar cells with RbF-PDT and Zn0.85Mg0.15O (without anti-reflective coating (ARC)) from various experimental campaigns show a PCE of 12.7% (Eg = 1.50 eV), and with a slightly reduced Eg of 1.45 eV a PCE of 15.5%, with VOC of 933 mV (VOC deficit of 517 mV), and a good FF of 73.2%. In the case when the bandgap is significantly lowered to 1.34 eV (GGI = 0.61), to the second theoretical efficiency maximum, we achieved a PCE of 18.2% with ARC for an Ag-free CIGS cell with RbF-PDT. For this cell with a CdS/i-ZnO buffer system the VOC deficit is 480 mV, and the FF is 78.1%.
Witte et al. (Mon,) studied this question.