The composition, structure, and properties of zinc-implanted silicon annealed in an inert atmosphere at elevated temperatures are analyzed. The samples were characterized by Rutherford backscattering spectrometry, transmission electron microscopy, and photoluminescence. The near-surface layer of silicon becomes amorphous after implantation, with the formation of particles of metallic zinc and its oxide with different orientations. Core–shell structures of the type Zn (core)/ZnO (shell) may also form. After annealing at 700°C, crystallites of the intermetallic compound ZnSi oriented with respect to the silicon crystal lattice are formed in the upper part of the near-surface layer, together with crystallites of metallic zinc and its oxide.
Privezentsev et al. (2025) studied this question.