Based on the theory of photon propagation and the principle of electron–semiconductor interaction, this paper proposes a formation mechanism model of multiplication noise in the electron multiplication layer of EBCMOS. Using the Monte Carlo method, the signal-to-noise ratio (SNR) of multiplied electrons is calculated, and the effects of key structural design parameters (including the doping concentration of the P-type substrate, thickness of the electron multiplication layer, and the material and thickness of the passivation layer) along with the incident electron energy on multiplication noise are systematically analyzed. The results show that Al2O3 is the optimal passivation material for structural design, and the SNR can be effectively improved by increasing the incident electron energy, reducing the passivation layer thickness, decreasing the doping concentration, and thinning the electron multiplication layer. These findings provide theoretical insights for the electron multiplication layer structural optimization and performance improvement of EBCMOS.
Jiao et al. (Sun,) studied this question.