What question did this study set out to answer?

The study aims to demonstrate the performance of AlGaN channel HEMTs operating at high voltages with superior metrics.

May 29, 2026Open Access

Kilo‐Volt Class Al 0.65 Ga 0.35 N Channel Metal Insulator Semiconductor HEMTs With >300MW/cm 2 Baliga Figure of Merit on Sapphire Substrate

Key Points

The study aims to demonstrate the performance of AlGaN channel HEMTs operating at high voltages with superior metrics.
Devices fabricated with Al-rich AlGaN on sapphire substrate.
Measured breakdown voltage at 2 kV and 2.6 kV.
Evaluated Baliga figure of merit and on-resistance.
Breakdown voltages of 2 kV and 2.6 kV achieved.
Baliga figure of merit values of 288 MW/cm² and 325 MW/cm² reported, respectively.
On-resistance measured at 14.15 mΩ.cm² and 21.02 mΩ.cm².

Abstract

In this work, we demonstrate an Al‐rich AlGaN channel metal insulator semiconductor HEMT device operating at >2 kV on a sapphire substrate. Devices with 2and 2.6 kV breakdown voltage demonstrated a Baliga figure of merit (BFOM) of 288 and 325 MW/cm 2 with an on‐resistance of 14.15 and 21.02 mΩ.cm 2 , respectively. Reported BFOM of 325 MW/cm 2 value is 1.7 times the state‐of‐the‐art passivated AlGaN channel transistors on sapphire substrate. The obtained results represent the potential of the ultra‐wide bandgap (UWBG) AlGaN channel transistors for advanced power electronics applications.

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