Dummy trench gate design for enhancing short-circuit capability in 1200V IGBT

Key Points

• This study aims to improve the short-circuit capability and reduce on-state voltage drop in IGBT designs.
• Adopts a dummy trench gate structure design based on conventional IGBT architecture.
• Simulates the new IGBT structure against traditional designs.
• The new IGBT structure shows a reduced on-state voltage drop compared to the conventional design.
• Short-circuit capability is significantly enhanced in the proposed design.