The present study introduces an advanced high-efficiency solar cell design that leverages nitrogenated holey graphene (C2N) as the absorber layer and a heavily doped p-CZT layer as an innovative back-surface field (BSF) material. Using the SCAPS-1D simulator, a previously reported cell structure (TCO/IGZO/C2N/back contact) with an efficiency of 18. 22% was first reproduced and further enhanced by integrating Al and Pt as front and back contacts, respectively. A simple yet powerful numerical simulation in SCAPS enabled precise evaluation of how different physical parameters affect device performance. Building on these insights, a novel layered materials hetero-junction structure (Al/TCO/IGZO/C2N/CZT/Pt) was proposed. This device was proposed ans systematically optimized. This reveals that the CZT-BSF layer significantly boosts the performance—raising efficiency from 14. 65 to 20. 97%, while {V{₎₂}} increased from 1. 33 to 1. 4044 V, {J{ₒ₂}}, from 17. 61 to 23. 68 mA/cm2, and fill factor FF from 84. 50 to 89. 08%. These findings highlight the strong potential of C2N-based structures for next-generation photovoltaic and optoelectronic technologies.
Alsalhi et al. (Fri,) studied this question.