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July 15, 20252 citationsOpen Access

Nano-Porous Layers Integration for the Fabrication of ISFET and Related Transistor Based Biosensors

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CRCristian RavariuUniversity of BucharestEME. ManeaNational Institute for Research and Development in MicrotechnologiesCPCătălin PârvulescuNational Institute for Research and Development in Microtechnologies

Key Points

  • ISFET transistors integrate ion-sensitive layers, improving detection limits for biosensors.
  • Nanoporous materials enhance sensor performance through capillary effects and stable anchoring on silicon wafers.
  • The review highlights the evolution of ISFET transistors alongside newer nano-wire devices and their construction techniques.
  • Optimizing transducer responses in chemosensors and enzymatic biosensors is crucial for future technological advancements.

Abstract

More and more chemosensors and biosensors are turning to electronic transistors, as ideal transducers, precise in current response, miniaturized in size and capable of providing sub-picomolar detection limits. Among these devices, ISFET transistors - Ion Sensitive Field Effect Transistors, have the capacity of integrating ion-sensitive layers together with field effect transistors of ultimate generations. Recent studies have indicated that nanoporous materials deposited or grown within the transistor gate space offer a dual advantage - a favorable environment for an optimal capture of liquid state receptors through capillary effects, but also of direct anchoring of these nanoporous structures on Si-wafer. This article aims to review the constructive evolutions of ISFET transistors along with some newer nano-wire devices, along with their co-integration techniques with nanoporous materials, beneficial in the optimization of many chemosensors, but of enzymatic biosensors, in particular.

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Cite This Study

Ravariu et al. (2025) studied this question.

synapsesocial.com/papers/689a02b6e6551bb0af8cc4d8https://doi.org/10.20944/preprints202507.1052.v1
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