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May 1, 2006Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Reaction of molecular beam epitaxial grown AlN nucleation layers with SiC substrates

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WHW. E. HokeATA. TorabiRHR. B. Hallock

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Hoke et al. (2006) studied this question.

synapsesocial.com/papers/69da5b09a6045d71bfa3c998https://doi.org/10.1116/1.2192539
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