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April 10, 2026Journal of Materials Chemistry A0 citationsOpen Access

Impact of vapor phase Ge incorporation and reaction pathways on the performance and stability of Cu 2 Zn(Ge,Sn)Se 4 solar cells

TKTalat KhonsorDNDavid NowakDPDevendrá Pareek

Key Points

  • The aim is to investigate how vapor phase Ge incorporation and various reactions affect the performance and stability of Cu2Zn(Ge,Sn)Se4 solar cells.
  • Examined the impact of Cu/Sn precursor ratio on composition shifts
  • Analyzed defects linked to SnSe2−x and GeSe2−x vapors
  • Applied post-deposition treatments to enhance performance
  • Achieved 12.5% solar cell efficiency at Ge/(Ge + Sn) = 9%
  • Identified a promising physical route for improving solar cell performance despite similar end compositions

Abstract

Composition shifts driven by the Cu/Sn precursor ratio and SnSe 2− x and/or GeSe 2− x vapor affect defects despite similar end compositions. Post-deposition treatment delivers 12.5% efficiency at Ge/(Ge + Sn) = 9%, showing a promising physical route.

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Cite This Study

Khonsor et al. (2026) studied this question.

synapsesocial.com/papers/69d895046c1944d70ce05fcahttps://doi.org/10.1039/d5ta07860a
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