Enhancement of phase change memory properties of GeTe films through GeS 2 incorporation

Key Points

• Enhanced phase change memory properties were observed in GeTe films integrated with GeS2 doping, indicating improved performance.
• Characterization methods revealed significant changes in thermal stability and electrical characteristics due to GeS2 incorporation.
• The approach involved doping GeTe films with varying concentrations of GeS2 to determine optimal enhancements.
• These findings highlight the importance of material composition in advancing phase change memory technologies.