Interface-driven resistive switching and synaptic behavior in the graphene oxide-based memristive devices

Key Points

• Resistive switching capabilities indicate robust synaptic behavior in the devices tested, enhancing performance.
• Key evidence includes a notable improvement in device response times, with significant variability observed across samples.
• Analysis of interface-driven mechanisms showcases how structural properties of graphene oxide contribute to resistive switching.
• Potential applications in neuromorphic computing emerge, emphasizing the need for further exploration and optimization.