Molecular dynamics simulation of atomic layer etching for sidewall damage recovery in GaN-based structures

Puntos clave

• Sidewall damage recovery is enhanced significantly with atomic layer etching techniques, improving structural integrity.
• A notable 35% increase in material recovery was observed during simulations over a set timeframe.
• Analysis involves molecular dynamics simulations to assess atomic layer etching effects on gallium nitride structures.
• These findings highlight the importance of simulation in developing better etching methods for GaN materials.