Suppressing dark noise in silicon photomultipliers (SiPMs) remains highly challenging because Geiger-mode operation inherently leads to high dark count rates (DCR). Although epitaxial silicon layers grown on heavily doped substrates are widely employed, high-temperature epitaxial processing often induces dopant autodoping and the formation of interface states, which significantly exacerbate noise. In this work, we demonstrate that SiPMs fabricated on antimony (Sb)-doped substrates exhibit approximately 20% lower DCR, up to 40% higher photon detection efficiency, and about 15% improvement in single-photon timing resolution at an excess bias of 8 V, compared with their arsenic (As)-doped counterparts. These performance enhancements are attributed to the larger covalent radius and higher diffusion activation energy of Sb, which effectively suppress autodoping and minimize interface-state formation at the epitaxial–substrate boundary, thereby enabling low-noise, high-precision SiPM operation.
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Xicheng Zhang
Jiangteng Xia
Ye Tian
IEEE Journal of the Electron Devices Society
SHILAP Revista de lepidopterología
Beijing University of Posts and Telecommunications
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Zhang et al. (Thu,) studied this question.
www.synapsesocial.com/papers/69a76055c6e9836116a2cf96 — DOI: https://doi.org/10.1109/jeds.2026.3661177
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