Performance optimization of MFIS nanowire FeFET using silicon/InAs materials through TCAD simulation

Key Points

• Performance optimization of MFIS nanowire FeFET shows significant enhancements with the use of silicon/InAs materials for better electronic properties.
• Key evidence indicates a notable improvement in parameters through TCAD simulation, highlighting the effective interaction between materials.
• Assessment using TCAD simulation reveals detailed insights into the performance characteristics of the nanowire structures employed.
• Highlights the importance of material selection in optimizing performance, paving the way for next-generation electronic devices.