Full-band UV Photodetection with high performance via CuGa2O4 film grown on p-GaN

Puntos clave

• High-performance UV photodetection achieved with a CuGa2O4 film on p-GaN.
• The optimal photocurrent reached 10 mA/cm² under specific conditions, indicating potent sensitivity.
• Analysis employed a thin film technique to construct the CuGa2O4 layer integrated with p-GaN, a promising semiconductor.
• This study highlights the potential for improved UV sensors, necessitating further exploration in practical applications.