Integrated Ion-Sensitive Field-Effect Transistor Using CMOS-Based Technology

Key Points

• Enhanced sensitivity was achieved in the ion-sensitive field-effect transistor through CMOS technology, indicating better performance.
• Integration of the CMOS-based technology allows for miniaturization and efficiency improvements in sensor applications.
• Observational analysis demonstrated the viability of integrating ion-sensitive features within existing CMOS frameworks.
• This advancement may enable broader applications for sensitive detection technologies in various fields.

Abstract