Molybdenum (Mo) is currently considered as a potential diffusion barrier material for copper (Cu) interconnects, and these interconnect structures are generally processed using the technique of chemical mechanical planarization (CMP). While a limited number of publications on Mo CMP are presently available, the considerations for mitigating CMP-induced galvanic corrosion of Mo have remained largely underexplored. Using a model CMP system in pH-neutral slurries of citric acid with silica abrasives, the present work demonstrates how Mo barrier lines in contact with Cu wires in the CMP environment can develop CMP defects of galvanic corrosion. Including imidazole in the slurry considerably reduces the galvanic current of this corrosion process. The mechanisms of galvanic inhibition and material removal are examined by employing strategic tribo-electrochemical measurements. Open-circuit potential and potentiodynamic polarization measurements performed under surface abrasion aid the characterization of CMP-enabling surface reactions. The slurry’s surface chemistry initiates the primary modes of material wear for CMP, and corrosion-induced propagation of subsurface wear mostly governs the measured material removal rates for both Mo and Cu. Although the Cu:Mo selectivity of material removal is affected as the galvanic corrosion of Mo is suppressed, this effect can be controlled by varying the slurry content of imidazole.
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Kassapa U. Gamagedara
D. Roy
Electrochem
Clarkson University
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Gamagedara et al. (Sat,) studied this question.
www.synapsesocial.com/papers/69ba425c4e9516ffd37a2985 — DOI: https://doi.org/10.3390/electrochem7010006
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