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Modelling of subthreshold currents in sb-cntfets | Synapse

April 12, 2026

Modelling of subthreshold currents in sb-cntfets

Key Points

The aim is to model and analyze current-voltage characteristics of SB-CNTFETs to understand their performance in digital circuits.
Developed a procedure to model the current-voltage characteristics.
Characterized the SB-CNTFETs below and above threshold voltages.
Evaluated the noise margin necessary for circuit design.
Characterization helps define performance limits of SB-CNTFETs.
Identifying effective noise margins enhances design reliability for digital circuits.

Abstract

In this paper we present a procedure to model and characterize the current voltage characteristics of Schottky Barrier (SB) Carbon NanoTube Field Effect Transistors (SB-CNTFETs) below and above threshold, to evaluate the noise margin, whose values are necessary in the design of digital circuits.

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Authors

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Anna Gina Perri

Journals

i-manager’s Journal on Electronics Engineering

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Cite this study

Anna Gina Perri (Sun,) studied this question.

www.synapsesocial.com/papers/69db38534fe01fead37c6889 — DOI: https://doi.org/10.26634/jele.16.2.909