Impact of Purge Regime and Reactor Volume on ALD ZnO and ZrO2 Growth: From Structural Properties to Applications

ALD is a precise thin-film deposition technique based on self-limiting surface reactions. A crucial stage in each ALD cycle is the purge step, which removes excess precursor molecules and reaction by-products from the reactor chamber, preventing uncontrolled gas-phase reactions that could degrade film quality. Despite its fundamental importance, the impact of purge dynamics on film growth and structure remains insufficiently explored. ZnO and ZrO2 films were deposited in reactors with different effective chamber volumes (47 and 470 cm3), enabling a systematic study of gas residence time effects. Our results demonstrate that the purge mode—dynamic versus static vacuum—strongly affects the growth behavior, crystallinity, and surface morphology of ALD oxides. Dynamic purging leads to smoother, more uniform, and better-crystallized films, whereas static exposure results in lower structural and morphological quality, particularly for ZrO2. Importantly, these results demonstrate that purge-mode engineering provides a powerful and cost-effective route for tailoring oxide film structure without altering the precursor chemistry or deposition temperature. To validate the practical integration of these optimized films, functional phosphor and LED structures were fabricated, confirming that the controlled microstructure is well-suited for optoelectronic applications. This approach also offers new possibilities for controlling film properties in sensors and catalysts.