In this article, a low-power low-intermediate-frequency (Low-IF) receiver front-end is presented for Bluetooth Low Energy (BLE) body area network (BAN) applications. The receiver employs an input matching network, an inductorless self-biased inverter-based low-noise transconductance amplifier (LNTA), a single-balanced passive mixer, a common-gate transimpedance amplifier (TIA), and a Gm-C complex filter for image suppression. Native MOS devices are adopted to support low-voltage operation and reduce static power consumption. The interstage on-chip coupling capacitor between the RF front-end and the TIA is removed by aligning the DC operating points of the two stages. The receiver front-end is implemented in a 55 nm standard CMOS process and occupies an active area of 0.081 mm2, excluding bonding pads. Post-layout simulations show that the proposed design achieves 45.2 dB gain, 7.2 dB noise figure, and 28.1 dB image rejection ratio over the 2.4–2.48 GHz band, while consuming 537 μW. The proposed front-end is suitable for low-power BLE BAN sensor nodes.
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Yajun Xia
Lizhuang Liu
Zhaofeng Zhang
Electronics
Chinese Academy of Sciences
University of Chinese Academy of Sciences
Shanghai Advanced Research Institute
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Xia et al. (Mon,) studied this question.
www.synapsesocial.com/papers/69df2c1de4eeef8a2a6b11d4 — DOI: https://doi.org/10.3390/electronics15081614